Semiconduvctor laser element and manufacture thereof
文献类型：专利
| 作者 | WATANABE NOZOMI; SHINOZAKI KEISUKE; FURUKAWA RYOZO; USHIKUBO TAKASHI |
| 发表日期 | 1987-12-07 |
| 专利号 | JP1987281384A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconduvctor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To assure the high output by a method wherein an active layer is made of high compensation Si doped GaAs crystal; a GaAs crystal is formed on the part corresponding to an oscillating region above a clad layer; a metallic electrode and a GaAs layer of current injection part are brought into ohmic contact; and other parts are simultaneously Schottky junctioned. CONSTITUTION:Most of the light emitted in an active layer 3 is closed in the active layer 3, however, a bit of evanescent fields are to be left on clad layers 2, 4. On the other hand, the field distribution in the regions not containing a GaAs layer 13 is differentiated due to the existance of a metallic electrode while the region containing the GaAs layer 13 and the other regions not containing the same are subjected to the equivalent difference in refractive index to close the emitted light in the horizontal direction. The light in the vertical direction is closed by the first clad layer 2 and the third clad layer 12 to be transmitted between the active layer 3 and the GaAs layer 13. Especially, the light emitted from the Si doped GaAs active layer 3 having longer wavelength than that at the absorbing end of GaAs is not absorbed into the GaAs layer 13. Resultantly, the sectional area of photowaveguide is three layered forming so-called LOC (large optical cavity) to assure the high output characteristics. |
| 公开日期 | 1987-12-07 |
| 申请日期 | 1986-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64287]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WATANABE NOZOMI,SHINOZAKI KEISUKE,FURUKAWA RYOZO,et al. Semiconduvctor laser element and manufacture thereof. JP1987281384A. 1987-12-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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