Algainp diodes emitting visible light
文献类型：专利
| 作者 | BONA GIAN-LUCA; BUCHAN NICHOLAS; HEUBERGER WILLI; ROENTGEN PETER |
| 发表日期 | 1993-05-05 |
| 专利号 | CA2076605A1 |
| 著作权人 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 国家 | 加拿大 |
| 文献子类 | 发明申请 |
| 其他题名 | Algainp diodes emitting visible light |
| 英文摘要 | ABSTRACT The invention concerns AlGalnP/GalnP visible laser diodes and LEDs withimproved maximum output power. This is achieved by embedding the activeregion of the diode (30), e.g. a GalnP active layer (35), between very thin p- andn-doped AlGalnP barrier layers (34.1, 34.2) and thick p- and n-doped AlGaAscladding layers (33, 36). The inventive barrier layers (34.1, 34.2) are employedto avoid tunneling and spill over of carriers from the active region (35) into thecladding (33, 36). These barrier layers (34.1, 34.2) can be very thin thus allowingbandgap engineering and providing for barriers with low defect density. Inaddition the low resistance of the AlGaAs cladding reduces the thermal andelectrical resistances of the device. |
| 公开日期 | 1993-05-05 |
| 申请日期 | 1992-08-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64297]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTERNATIONAL BUSINESS MACHINES CORPORATION |
| 推荐引用方式 GB/T 7714 | BONA GIAN-LUCA,BUCHAN NICHOLAS,HEUBERGER WILLI,et al. Algainp diodes emitting visible light. CA2076605A1. 1993-05-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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