Growth of buried type laser crystal
文献类型：专利
| 作者 | NISHIJIMA YOSHITO; SHINOHARA KOUJI; FUKUDA HIROKAZU; EBE KOUJI |
| 发表日期 | 1985-06-10 |
| 专利号 | JP1985105288A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Growth of buried type laser crystal |
| 英文摘要 | PURPOSE:To prevent the change of the shape of a mesa striped section and the formation of a section not grown in a buried layer on crystal growth by a method wherein the temperature-drop rate of a melt is accelerated,the periphery of the mesa striped section is buried, the temperature-drop rate is retarded and the section not grown is buried. CONSTITUTION:Growth at a first step is executed at a fast temperature-drop rate, and a mesa striped section 5 is coated with a buried layer 6 consisting of an N type Pb.Te.Se layer. There is a section not grown in the periphery of the mesa striped section 5 under the conditions of the crystal growth, but a growth solution holding block 11 is slid and a melt 13 is returned onto a dummy substrate 10, an electric furnace is adjusted so that a temperature-drop rate is retarded under the state, and the melt 13 is moved onto a substrate 8 again and crystal growth at a second step is executed up to predetermined thickness. Consequently, since a position where the section not grown is easy to be formed differs according to the temperature-drop rate, the section not grown shaped at the first step is buried by growth at the second step, thus growing a buried layer 6 with a flat shape. |
| 公开日期 | 1985-06-10 |
| 申请日期 | 1983-11-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64298]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHIJIMA YOSHITO,SHINOHARA KOUJI,FUKUDA HIROKAZU,et al. Growth of buried type laser crystal. JP1985105288A. 1985-06-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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