Semiconductor device and method of selective insulation of semiconductor device having superlattice structure
文献类型：专利
| 作者 | MISHIMA TOMOYOSHI; UCHIDA YOKO; TAGAMI TOMONORI |
| 发表日期 | 1989-11-21 |
| 专利号 | JP1989289181A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and method of selective insulation of semiconductor device having superlattice structure |
| 英文摘要 | PURPOSE:To generate a stable high-resistance region and a region having a refractive index different from that of the high-resistance region and to improve a differential quantum efficiency by a method wherein a semiconductor layer having a superlattice structure is provided on a semiconductor substrate, defective dislocation regions are selectively formed here and the whole surface including these regions is covered with an insulating layer. CONSTITUTION:A GaAs buffer layer 2, an InGaAs channel layer 3, an AlGaAsSi layer 4 and a GaAsSi layer 5 are laminatedly grown on a GaAs substrate 1 by a molecular beam epitaxial method to constitute a FET. Then, an SiO2 film is adhered on this layer 5 by a CVD method, the SiO2 film 6 is partially made to remain by a photolithography method and an InGaAs layer 7 is grown only on the exposed layer 5. In such a way, a large quantity or dislocation 8 is generated between the base layer 3 and the uppermost layer 7 to form isolation regions B. That is, as the layers 4 and 5 both have the same crystal constant as those of the substrate 1 and the layer 2, lattice mismatching layers are limited to the layers 3 and 7 only, the total film thickness of the layers 3 and 7 is specified to make to exceed the threshold value of a film thickness of dislocation generation and these defective dislocation regions are formed into high-resistance and high-refractive index regions to use as the isolation regions. |
| 公开日期 | 1989-11-21 |
| 申请日期 | 1988-05-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64299]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | MISHIMA TOMOYOSHI,UCHIDA YOKO,TAGAMI TOMONORI. Semiconductor device and method of selective insulation of semiconductor device having superlattice structure. JP1989289181A. 1989-11-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。