Method for controlling coherence of semiconductor laser element
文献类型:专利
作者 | UEDA SADAAKI; OSHIMA NOBORU |
发表日期 | 1992-05-18 |
专利号 | JP1992144184A |
著作权人 | SHARP CORP |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Method for controlling coherence of semiconductor laser element |
英文摘要 | PURPOSE:To reduce coherence of a laser to be generated and to reduce a return light noise by forming a clad layer between a current narrowing layer and a light emitting layer of a predetermined composition, and setting carrier concentration of the clad layer to a predetermined value or less. CONSTITUTION:A clad layer between a current narrowing layer and a light emitting layer is formed of Ga(1-x)AlxAs (0.3/cm or below. the cap concentrations of the emitting layer 4, a second clad layer 6 and a cap layer 6 are respectively 1-10X10/cm, 1-10X10/cm, 2-4X10/cm, and carrier concentration of a first clad layer 3 between the narrowing layer 2 and the emitting layer 4 is variously varied in a range of 5-30X10/cm by regulating adding amount of an impurity such as Mg, Zn, etc. The lower the carrier concentration becomes, the smaller a gamma value of an index or coherence becomes. This trend is particularly remarkable if the cap concentration in a region having high threshold current is 5X10/cm or below. |
公开日期 | 1992-05-18 |
申请日期 | 1990-10-04 |
状态 | 失效 |
源URL | [http://ir.opt.ac.cn/handle/181661/64301] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | SHARP CORP |
推荐引用方式 GB/T 7714 | UEDA SADAAKI,OSHIMA NOBORU. Method for controlling coherence of semiconductor laser element. JP1992144184A. 1992-05-18. |
入库方式: OAI收割
来源:西安光学精密机械研究所
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