Distributed feedback laser including AlGaInAs in feedback grating layer
文献类型：专利
| 作者 | IKOMA, NOBUYUKI; KAWAHARA, TAKAHIKO |
| 发表日期 | 2006-07-06 |
| 专利号 | US20060146902A1 |
| 著作权人 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback laser including AlGaInAs in feedback grating layer |
| 英文摘要 | The present invention provides a distributed feedback laser diode (DFB-LD), in which the active region may be easily flattened. The active region of the invention is optically coupled with the feedback grating made of the n-type InP layer and the n-type AlGaInAs layer. Since both layers show the n-type conduction, the n-type impurities, which are typically silicon (Si), introduced from the ambient or tools may not increase the resistivity of the layers. Moreover, the difference in the refractive index between AlGaInAs and InP is greater than that between InGaAsP and InP. Accordingly, even when the magnitude of the undulation formed in the interface between AlGaInAs and InP is small, the coupling coefficient between the grating the active layer, which is equal to the product of the magnitude of the undulation H and the difference in the refractive index An, may be prevented from the extreme decrease. |
| 公开日期 | 2006-07-06 |
| 申请日期 | 2005-11-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64302]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO ELECTRIC INDUSTRIES, LTD. |
| 推荐引用方式 GB/T 7714 | IKOMA, NOBUYUKI,KAWAHARA, TAKAHIKO. Distributed feedback laser including AlGaInAs in feedback grating layer. US20060146902A1. 2006-07-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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