Semiconductor laser element and its driving method
文献类型：专利
| 作者 | IKEDA SOTOMITSU |
| 发表日期 | 1992-08-03 |
| 专利号 | JP1992211188A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and its driving method |
| 英文摘要 | PURPOSE:To provide a variable wavelength semiconductor laser element which has a wide variable wavelength range and highly efficiently operates and the driving method of the laser element. CONSTITUTION:An optical waveguide structure section containing a plurality of light emitting layers 11a and 11b having different band gaps and a barrier layer 12 provided between the layers 11a and 11b is put between clad layers 13 and 15. The band gap and thickness of the layer 12 are set to such magnitudes that the carrier concentration of the layer 11b having the larger band gap can become higher and that of the layer 11a having the smaller band gap can become lower when carriers are injected into the layers 11a and 11b as compared with the case where the barrier layer is not provided. In addition, they are also set to such magnitudes that the band gap of the layer 11b having the larger band gap at the basic level can become nearly equal to one of the band gaps at higher-order levels of the layer 11a having the smaller band gap. |
| 公开日期 | 1992-08-03 |
| 申请日期 | 1991-02-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64308]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | IKEDA SOTOMITSU. Semiconductor laser element and its driving method. JP1992211188A. 1992-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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