Production of semiconductor element
文献类型：专利
| 作者 | KANEKO TADAO; SASAKI YOSHIMITSU; SAITO KATSUTOSHI |
| 发表日期 | 1992-04-28 |
| 专利号 | JP1992127157A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Production of semiconductor element |
| 英文摘要 | PURPOSE:To obtain a mask for dry etching having excellent perpendicularity by subjecting upper resist patterns of a three-layered structure to a high temp. heating treatment after the formation thereof, thereby erasing striation and the laminated cross stripes by the influence of standing waves. CONSTITUTION:A 1st layer photoresist layer 2 is formed on an InP semiconduc tor substrate 1 and is then spin coated with a soln. mixed with orthotitanic acid and is heat treated, by which an intermediate layer 3 is formed. The upper layer photoresist film is therafter formed and is exposed by a reduction stepper to form patterns 4. The striation 5 and the laminated cross stripes 6 generated by the influence of the standing waves are erased by executing the heating treatment for 20 minutes at 170 deg.C. The intermediate layer 3 and the lower layer resist 2 are dry etched in this way, by which the mask for sharp dry etching which is free from the striation at the pattern edges is obtd. |
| 公开日期 | 1992-04-28 |
| 申请日期 | 1990-09-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64310]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | KANEKO TADAO,SASAKI YOSHIMITSU,SAITO KATSUTOSHI. Production of semiconductor element. JP1992127157A. 1992-04-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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