中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Hybrid narrow -linewidth semiconductor lasers

文献类型:专利

作者BARTMAN, RANDALL K.; KSENDZOV, ALEXANDER; DUBOVITSKY, SERGE
发表日期2002-03-28
专利号US20020037025A1
著作权人NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
国家美国
文献子类发明申请
其他题名Hybrid narrow -linewidth semiconductor lasers
英文摘要The present invention is a method and apparatus for creating a narrow linewidth hybrid semiconductor laser using silicon-oxide and silicone-oxynitride based external feedback elements. These feedback elements use Bragg gratings formed by periodic variation of the refractive index with a resonate optical reflector. The laser has a narrow linewidth (in the tens of kHz range), which can be accurately tunable to facilitate locking to an ultra-stable cavity. A semiconductor optical gain chip is soldered to a micromachined silicon bench. This semiconductor optical gain chip is coupled into a silicon-oxide/silicon-oxinitride/silicon-oxide (SiO2/SiON/SiO2) waveguide terminating in an appropriate feedback element that facilitates linewidth reduction. In order to suppress the loss and scattering at the SiO2/SiON/SiO2 interface and due to residual facet reflectance, an antireflection coating is applied. In order to achieve low loss due to mode mismatch, the waveguide modes are tailored to match the gain chip modes.
公开日期2002-03-28
申请日期2001-09-25
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/64337]  
专题半导体激光器专利数据库
作者单位NATIONAL AERONAUTICS AND SPACE ADMINISTRATION
推荐引用方式
GB/T 7714
BARTMAN, RANDALL K.,KSENDZOV, ALEXANDER,DUBOVITSKY, SERGE. Hybrid narrow -linewidth semiconductor lasers. US20020037025A1. 2002-03-28.

入库方式: OAI收割

来源:西安光学精密机械研究所

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