Mode-locked semiconductor lasers with quantum-confined active region
文献类型：专利
| 作者 | GRAY, ALLEN L.; HUANG, HUA; LI, HUA ; VARANGIS, PETROS M.; ZHANG, LEI; ZILKO, JOHN L.
|
| 发表日期 | 2006-10-05 |
| 专利号 | US20060222024A1 |
| 著作权人 | INNOLUME ACQUISITION, INC. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Mode-locked semiconductor lasers with quantum-confined active region |
| 英文摘要 | A mode-locked integrated semiconductor laser has a gain section and an absorption section that are based on quantum-confined active regions. The optical mode(s) in each section can be modeled as occupying a certain cross-sectional area, referred to as the mode cross-section. The mode cross-section in the absorber section is larger in area than the mode cross-section in the gain section, thus reducing the optical power density in the absorber section relative to the gain section. This, in turn, delays saturation of the absorber section until higher optical powers, thus increasing the peak power output of the laser. |
| 公开日期 | 2006-10-05 |
| 申请日期 | 2005-12-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64339]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INNOLUME ACQUISITION, INC. |
| 推荐引用方式 GB/T 7714 | GRAY, ALLEN L.,HUANG, HUA,LI, HUA,et al. Mode-locked semiconductor lasers with quantum-confined active region. US20060222024A1. 2006-10-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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