Liquid phase epitaxial growth apparatus
文献类型：专利
| 作者 | ITOU MICHIHARU; YOSHIKAWA MITSUO; HAMASHIMA SHIGEKI |
| 发表日期 | 1982-06-24 |
| 专利号 | JP1982102013A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Liquid phase epitaxial growth apparatus |
| 英文摘要 | PURPOSE:To take out a substrate easily after epitaxial growth by providing a waste storage, difference in level and so forth to a supporting stand. CONSTITUTION:A storage 13 to store liquid phase which is to have epitaxial growth, a supporting stand 11 which has a storage 14 into which disused liquid phase after epitaxial growth is wasted, a through hole 17 which receives overflowed liquid phase from the storage 13 and a sliding member 12 which has a concave in which a substrate 15 is housed are provided. Then the sliding member 12 is traveled on the supporting stand 11 and the substrate 15 is given a face-to-face contact with the liquid phase so that the epitaxial growth is made. After that the substrate 15A on which the epitaxial growth has been made is dropped at the portion with difference in level of the supporting stand 11 and is taken out. |
| 公开日期 | 1982-06-24 |
| 申请日期 | 1980-12-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64343]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | ITOU MICHIHARU,YOSHIKAWA MITSUO,HAMASHIMA SHIGEKI. Liquid phase epitaxial growth apparatus. JP1982102013A. 1982-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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