Semiconductor laser device and opticlal fiber amplifier using the same
文献类型：专利
| 作者 | YOSHIDA, JUNJI; TSUKIJI, NAOKI; SAITO, TSUYOSHI; IRINO, SATOSHI; MINATO, RYUICHIRO |
| 发表日期 | 2002-04-11 |
| 专利号 | US20020041613A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and opticlal fiber amplifier using the same |
| 英文摘要 | A semiconductor laser device with an active layer having a multi-quantum well structure including more than one well layer and more than one barrier layer and having a cavity length of more than 800 mum is disclosed, wherein the active layer includes a doped region which includes at least one well layer and at least one barrier layer adjacent to the well layer. The entire active region, comprising all of the well and active layers may be doped. Adjacent to the active layer are upper and lower optical confinement layers falls having a thickness within a range of from about 20 to about 50 nm. A optical fiber amplifier incorporating the semiconductor laser is also disclosed, including the semiconductor laser device sealed within a package disposed over a cooler, and wherein a light incidence facet of an optical fiber is optically coupled to the optical output power facet of the semiconductor laser device. |
| 公开日期 | 2002-04-11 |
| 申请日期 | 2001-06-08 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64348]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | YOSHIDA, JUNJI,TSUKIJI, NAOKI,SAITO, TSUYOSHI,et al. Semiconductor laser device and opticlal fiber amplifier using the same. US20020041613A1. 2002-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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