Very short light pulse generating equipment
文献类型：专利
| 作者 | ODANI JIYUN; YANAI TETSUO |
| 发表日期 | 1991-04-11 |
| 专利号 | JP1991087085A |
| 著作权人 | 松下電器産業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Very short light pulse generating equipment |
| 英文摘要 | PURPOSE:To realize the large output of very short light pulse with short wavelength by a method wherein a semiconductor laser is constituted of a gain region and a saturable absorption region, a very short light pulse with a large peak output is obtained, light pulse output of laser is made to enter, as the fundamental wave, into a wavelength transducer of an optical waveguide type, and the second harmonic wave proportional to square of the fundamental wave output is obtained. CONSTITUTION:A very short light pulse generating equipment of wavelength converting type is constituted of the following; a GaAlAs/GaAs based semiconductor laser 9 of oscillation wavelength of 0.83mum, a GaAlAs active layer 10, a gain region 11 having a length of 230mum, saturable absorption regions 12, 13 having a length of 25mum, a current injecting electrode 14, a wavelength transducer 2, an optical waveguide 3, lenses 4, 5, and a lambda/2 plate 6. The resonator end-surface 20 of the laser 9 is formed of a multilayer coating of Al2O3 and Si, and the reflection factor is high: 96%. The end-surface 21 is formed of a single layer of Al2O3, and the reflection factor is low and 3%. In the transducer 2, the optical waveguide 3 is formed on a Z-cut LiNbO3 substrate by proton exchange. The fundamental wave is the lowest order TM waveguide mode, and the higher harmonics are the Cherenkov radiation type of the TM radiation mode. |
| 公开日期 | 1991-04-11 |
| 申请日期 | 1990-05-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64350]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | ODANI JIYUN,YANAI TETSUO. Very short light pulse generating equipment. JP1991087085A. 1991-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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