Buried DBR semiconductor laser
文献类型：专利
| 作者 | OGAWA HIROSHI; WADA HIROSHI; OSHIBA SAEKO; HORIKAWA HIDEAKI |
| 发表日期 | 1988-10-24 |
| 专利号 | JP1988255987A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Buried DBR semiconductor laser |
| 英文摘要 | PURPOSE:To enable a single longitudinal mode oscillation without the deterioration of oscillation characteristics by a method wherein a buried DBR semiconductor laser is provided with an active region with a semilunar section, which is provided in a V-shaped groove, and a DBR region, which is provided at the region on the outside of this V-shaped groove and is made to couple by means of directional coupling with the active region. CONSTITUTION:A buried DBR semiconductor laser is constituted in a structure that an active region 46 with a semilunar section is provided in a V-shaped groove 42 and a distributed Bragg reflector (DBR) region 58, which is provided at the region on the outside of the groove 42 and is made to couple, by means of directional coupling with the active region 46, is provided. For making the region 50 and the region 46 couple together by means of directional coupling, an optical waveguide layer 50 is made to couple by means of directional coupling with the region 46. The length of the region 46 in the direction P of light to be emitted from the region 46 is desirably made to be twice as long as a coupling length which is decided on the basis of the coupling coefficient of the layer 50 and the region 46. As a DBR of the region 58 can be formed on a flat region with good accuracy, a single longitudinal mode oscillation can be realized without generating the deterioration of oscillation characteristics even though said laser is a semiconductor laser provided with the active region 46 with a semilunar section in the groove 42. |
| 公开日期 | 1988-10-24 |
| 申请日期 | 1987-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64353]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OGAWA HIROSHI,WADA HIROSHI,OSHIBA SAEKO,et al. Buried DBR semiconductor laser. JP1988255987A. 1988-10-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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