Semiconductor light emitting device and manufacture of it
文献类型：专利
| 作者 | HOSHINA JUNICHI; OGURA MOTOTSUGU |
| 发表日期 | 1990-03-08 |
| 专利号 | JP1990069984A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device and manufacture of it |
| 英文摘要 | PURPOSE:To make a desired semiconductor light emitting device by forming an active area having a desired energy gap by irradiating light on a part of the area in the process in which a ternary compound semiconductor layer is formed on a substrate at a set temperature by an epitaxial growth method. CONSTITUTION:A GaAs substrate 1 is heated by high frequency heating method and an n-AlGaInP layer 2 is deposited by an epitaxial growth method while raw gas which effects a lattice matching to that of GaAs is supplied. After deposition of n-AlGaInp of a desired thickness, a GaInP active layer 3 is formed at the temperature at which the n-AlGaInP is deposited while raw gas which adjusts a lattice to that of GaAs is supplied. At the same time, the laser beam 9 is irradiated on an oscillation area of an active layer, a lower part of a stripe area, and a GaInP active area 4 is formed which has a desired bandgap, with the laser beam output set in accordance with the temperature profiles 10. After formation of the active layer, a p-AlGaInP clad layer 5 is deposited by an epitaxial growth method while raw gas which effects a lattice matching to that of GaAs is supplied. This method allows you to make a desired semiconductor light emitting device. |
| 公开日期 | 1990-03-08 |
| 申请日期 | 1988-09-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64354]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | HOSHINA JUNICHI,OGURA MOTOTSUGU. Semiconductor light emitting device and manufacture of it. JP1990069984A. 1990-03-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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