Semiconductor light emitting element of buried hetero structure
文献类型：专利
| 作者 | MATSUMOTO TAKU; KOIZUMI YOSHIHIRO; KURODA NAOTAKA |
| 发表日期 | 1989-08-15 |
| 专利号 | JP1989202889A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting element of buried hetero structure |
| 英文摘要 | PURPOSE:To reduce leakage current by making an inverse mesa structure where an active region is composed of (111) B side along direction and by making a semiconductor buried layer a high resistance layer which contains one or more kinds of impurities which forms a deep level. CONSTITUTION:A buried hetero structure semiconductor light emitting element is so made that an active region 12 is sandwiched between buried layers 16 whose reflective index is smaller than that of the active region 12 and whose forbidden band width is larger than that of the active region 12. An inverse mesa structure where the active region 12 is composed of (111) B side along direction is shaped. More particularly, since a pn-junction part is formed only on the active region part of an inverse mesa structure, parasitic capacity reduces and high-speed modulation is realized. Further, since an inverse mesa side wall part is formed at (111) B side, leakage current reduces extremely and a buried hetero structure semiconductor light emitting element which carries out light emitting at high efficiency can be obtained. |
| 公开日期 | 1989-08-15 |
| 申请日期 | 1988-02-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64368]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | MATSUMOTO TAKU,KOIZUMI YOSHIHIRO,KURODA NAOTAKA. Semiconductor light emitting element of buried hetero structure. JP1989202889A. 1989-08-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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