Infrared laser element
文献类型：专利
| 作者 | FUKUDA HIROKAZU; SHINOHARA KOUJI; KAWABATA YOSHIO; NISHIJIMA YOSHITO; YAMAMOTO KOUSAKU |
| 发表日期 | 1983-03-30 |
| 专利号 | JP1983053878A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Infrared laser element |
| 英文摘要 | PURPOSE:To prevent crack and improve yield of chipping in a compound semiconductor laser element including Pb by making the lattice constant of crystal layer at the upper part of crystal layer of light emitting region equal to that of the crystal layer in the light emitting region. CONSTITUTION:A P type Pb1-xSnxTe 22, P type Pb1-xSnxTe active layer 23 and an N type PbTe1-ySey24 are epitaxially grown in the liquid phase on the P type PbTe 2 When the lattice constant of the upper layer 24 of the active layer is made equal to that of the active layer, any crack is not generated in case of forming cleavage on the crystal and the yield of chipping can be improved. Moreover, any crystal defect is not generated in the vicinity of interface between the layers 23 and 24 owing to the lattice alignment and accordingly the laser beam emitting efficiency is not lowered. |
| 公开日期 | 1983-03-30 |
| 申请日期 | 1981-09-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64375]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | FUKUDA HIROKAZU,SHINOHARA KOUJI,KAWABATA YOSHIO,et al. Infrared laser element. JP1983053878A. 1983-03-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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