Epitaxial crystal growth
文献类型：专利
| 作者 | IMAMOTO HIROSHI |
| 发表日期 | 1989-10-20 |
| 专利号 | JP1989264217A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Epitaxial crystal growth |
| 英文摘要 | PURPOSE:To obtain a crystal whose flatness is excellent and whose quality is high by using a molecular beam epitaxial growth method and by supplying a group III element at a definite cycle while a group V element is being supplied. CONSTITUTION:A molecular beam epitaxial growth method is used in order to grow AlxGa1-xAs on a GaAs substrate. While a group V element (As) is being supplied continuously, the intermittent (ON/OFF) supply of a group III element (Ga, Al) is repeated. It is preferable that a supply amount of the group V element is smaller than a supply amount of the group III element while the group III element is being supplied. In addition, it is preferable that one evaporation duration (ON duration) of the group III element is to be about the duration during which an evaporated layer of one molecule layer or lower can be formed. |
| 公开日期 | 1989-10-20 |
| 申请日期 | 1988-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64376]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | IMAMOTO HIROSHI. Epitaxial crystal growth. JP1989264217A. 1989-10-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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