Opto-electronic integrated circuit element
文献类型：专利
| 作者 | KURODA KENICHI; OOTA ATSUSHI |
| 发表日期 | 1987-07-01 |
| 专利号 | JP1987147793A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Opto-electronic integrated circuit element |
| 英文摘要 | PURPOSE:To make it possible to form a semiconductor laser electrode and an electronic element electrode on the same plane by forming a groove by etching a part of a semi-insulating substrate and forming a TJS semiconductor laser in said groove, in which both n-side and p-side electrodes are present on the upper surface. CONSTITUTION:A part of a semi-insulating substrate 14 is etched to form a groove, in which an undoped AlGaAs layer 15, an n-type AlGaAs layer 16 is a lower cladding layer, an n-type GaAs layer 17 as an active layer, an n-type AlGaAS layer 18 as an upper cladding layer, and an n-type GaAs layer 19 as a cap layer are laminated. After that, a Zn diffusion region p type layer 20 and a Zn stripe region p type layer 21 are formed. Furthermore, as an FET part, a high-resistance AlGaAs layer 22 and an n-type GaAs layer 23 as an active layer are laminated in a manner a surface of the active layer 23 is in accordance with a surface of the cap layer 19. Consequently, it becomes possible to place the surface of a semiconductor laser part and that of an FET part on the same level and on that plane, a p-side electrode 24 and an n-side electrode 25 of the laser and a drain electrode 26, a gate electrode 27 and a source electrode 28 of the FET are formed. |
| 公开日期 | 1987-07-01 |
| 申请日期 | 1985-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64377]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | KURODA KENICHI,OOTA ATSUSHI. Opto-electronic integrated circuit element. JP1987147793A. 1987-07-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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