Semiconductor laser device with single wavelength and manufacture thereof
文献类型：专利
| 作者 | ITAYA YOSHIO; MOTOSUGI TSUNEJI |
| 发表日期 | 1985-10-30 |
| 专利号 | JP1985216595A |
| 著作权人 | NIPPON DENSHIN DENWA KOSHA |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device with single wavelength and manufacture thereof |
| 英文摘要 | PURPOSE:To enable oscillation with a single wavelength not by depending on the position of a cleavage surface by a method wherein one surface constituting the resonator of a distributed feedback type laser is made non-reflection type, and the other surface is provided with a high reflectance. CONSTITUTION:One side 7 of surfaces vertical to a layer 2 having a diffraction grating with a period LAMBDA=mlambda/2neff (m: integer, lambda: oscillation wavelength, nff: the effective refractive index of the active layer 2) is coated with a non-reflection coating 10, and the surface vertical to the other layer 2' is coated with a dielectric 11, further, a high refletion film 12 is added. Or, both the surfaces 7 and 7' vertical to the layer 2 are coated with said coating, and the film 12 is added to one surface. In such a case that the reflection from one surface is 0 and the reflectance of the other surface is 1, the titled device oscillating with a single wavelength can be obtained without depending on the position of a cleavage surface except that the position of the cleavage surface is theta=3pi/2. Besides, the gain necessary for oscillation reduces, and the reduction in threshold value can be contrived. |
| 公开日期 | 1985-10-30 |
| 申请日期 | 1984-04-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64391]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | ITAYA YOSHIO,MOTOSUGI TSUNEJI. Semiconductor laser device with single wavelength and manufacture thereof. JP1985216595A. 1985-10-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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