Single-mode dbr laser with improved phase-shift section and method for fabricating same
文献类型：专利
| 作者 | HWANG, WEN-YEN; ANSELM, KLAUS, ALEXANDER; ZHENG, JUN |
| 发表日期 | 2005-06-15 |
| 专利号 | EP1509975A4 |
| 著作权人 | APPLIED OPTOELECTRONICS INC. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Single-mode dbr laser with improved phase-shift section and method for fabricating same |
| 英文摘要 | An edge-emitting laser (100) for generating single-longitudinal mode laser light. A semiconductor active region (120) amplifies, by stimulated emission, light in the laser cavity at a lasing wavelength. There are first and second grating sections (141,143) adjacent to the active region (120) and having first and second reflectivities respectively and a first effective index of refraction. The first and second grating sections (141,143) have a Bragg wavelength substantially equal to the lasing wavelength. A gratingless phase-shift section (142) is disposed adjacent to the active region (120) and between the first and second grating sections (141,143) and has a second index of refraction different than the first index of refraction and a length sufficient to impart a phase shift for light at the lasing wavelength sufficient to achieve longitudinal mode operation. |
| 公开日期 | 2005-06-15 |
| 申请日期 | 2003-05-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64392]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | APPLIED OPTOELECTRONICS INC. |
| 推荐引用方式 GB/T 7714 | HWANG, WEN-YEN,ANSELM, KLAUS, ALEXANDER,ZHENG, JUN. Single-mode dbr laser with improved phase-shift section and method for fabricating same. EP1509975A4. 2005-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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