Semiconductor distribution feedback laser device and its manufacture
文献类型：专利
| 作者 | TADA KUNIO; NAKANO YOSHIAKI; INOUE TAKESHI; IRITA TAKESHI; NAKAJIMA SHINICHI; RA TAKESHI; IWAOKA HIDETO |
| 发表日期 | 1992-05-28 |
| 专利号 | JP1992155987A |
| 著作权人 | 光計測技術開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor distribution feedback laser device and its manufacture |
| 英文摘要 | PURPOSE:To suppress the cyclic perturbation of refractive index and perform light distribution feedback mainly consisting of the cyclic perturbation of gain coefficient by providing a low refractive index layer at each apex of the irregularity provided in an active layer, and providing a layer, whose refractive index is between that of active layer and that of the low refractive index layer, in contact with the irregularity. CONSTITUTION:Each layer of double hetero junction structure is epitaxially grown separately in two stages. In the first stage, a clad layer 3, an active layer 5, and a low refractive index layer 6 are crystal-grown in order on a substrate Next, by interfering exposure method and chemical etching, a diffraction grating (irregularity) is marked in a low refractive index layer 6 and an active layer 5. In the second stage, a middle refractive index layer 7 is grown on the active layer 5 and the low refractive index layer 6. At this time, the top of the middle refractive index layer 7 is flattened. Further thereon, a clad layer 8 and a contact layer 9 are grown in order continuously to complete double hetero junction structure. Next, an SiO2 insulating layer 12 is stacked on the contact layer 9, and a stripe-shaped window is made, and then electrode layers 11 and 10 are deposited. Furthermore, this is cleaved to complete individual semiconductor laser elements. |
| 公开日期 | 1992-05-28 |
| 申请日期 | 1990-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64393]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光計測技術開発株式会社 |
| 推荐引用方式 GB/T 7714 | TADA KUNIO,NAKANO YOSHIAKI,INOUE TAKESHI,et al. Semiconductor distribution feedback laser device and its manufacture. JP1992155987A. 1992-05-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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