Semiconductor crystal growing method
文献类型：专利
| 作者 | HORIE KAYOKO; OTSUKA TAKEO; AKIYAMA NAOKI |
| 发表日期 | 1991-09-25 |
| 专利号 | JP1991218007A |
| 著作权人 | VICTOR CO OF JAPAN LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor crystal growing method |
| 英文摘要 | PURPOSE:To improve crystalline quality by adding hydrogen in the epitaxial growth process of II-VI compound semiconductor crystal by using a gas source MBE equipment. CONSTITUTION:After a gas source MBE(molecular beam epitaxy) equipment 20 is used, and in the first plane, impurities in a system are decreased by high temperature baking, a Zn molecular beam evaporation source cell 22 is heated and kept so is to obtain a desired amount of molecular beam, and molecules are evaporated from the cell 22. On the other hand, selenium hydride gas from an Se feeding cylinder 28 is subjected to flow rate control by an MFC(mass flow controller) 30. The gas is heated and decomposed by a gas, cracking cell 23. Hydrogen gas from an H2 feeding cylinder 29 is heated and decomposed by a gas cracking cell 32, via an MFC 3 The above gasses are simultaneously supplied, and deposited on a GaAs substrate crystal 15 to obtain single crystal of ZnSe. Hence the added hydrogen eliminates the lattice defect in crystal, and crystalline material is improved. |
| 公开日期 | 1991-09-25 |
| 申请日期 | 1990-01-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64395]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | VICTOR CO OF JAPAN LTD |
| 推荐引用方式 GB/T 7714 | HORIE KAYOKO,OTSUKA TAKEO,AKIYAMA NAOKI. Semiconductor crystal growing method. JP1991218007A. 1991-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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