Multiple quantum well semiconductor laser
文献类型：专利
| 作者 | KAWABATA TOSHIHARU; ISHIGURO NAGATAKA |
| 发表日期 | 1989-09-26 |
| 专利号 | JP1989241884A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multiple quantum well semiconductor laser |
| 英文摘要 | PURPOSE:To realize a long wavelength band multiple quantum well(MQW) semiconductor laser having a low threshold value current by doping a barrier layer of the MQW with acceptors in a specific concentration range. CONSTITUTION:After an N-type InP clad layer 2 is grown on an N-type InP substrate face 1 in a plane (100), InGaAsP well layers 3 each having 200Angstrom of thickness and InP barrier layers 4 each having 200Angstrom of thickness are alternately grown as a MQW active layer, and a P-type InP clad layer 7 is further partly grown thinly. The number of the layers 3 is 6 and the layer is undoped, and the layer 4 is doped with Zn. In order to improve the hole injection efficiency, the Zn doping to the layer 4 is effective, and its optimum Zn concentration ranges from 1X10cm to 2.5X10cm. The Zn concentration is set to this range, thereby manufacturing long wavelength band MQW laser having a low threshold value current. |
| 公开日期 | 1989-09-26 |
| 申请日期 | 1988-03-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64413]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KAWABATA TOSHIHARU,ISHIGURO NAGATAKA. Multiple quantum well semiconductor laser. JP1989241884A. 1989-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。