A method for the production of a semiconductor laser device
文献类型：专利
| 作者 | MATSUMOTO, MITSUHIRO; SASAKI, KAZUAKI; KONDO, MASAKI |
| 发表日期 | 1992-02-05 |
| 专利号 | EP0469900A2 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | A method for the production of a semiconductor laser device |
| 英文摘要 | There is provided a method for the production of a semiconductor laser device which emits laser light from a facet (307). The method includes the steps of: growing a multi-layered structure containing an active layer (304) for laser oscillation on a semiconductor substrate (301) to form a wafer; etching the multi-layered structure to form a striped groove (320) perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets (307); bringing the facets (307) into contact with a sulfur-containing solution (308); subjecting the facets (307) to heat treatment; growing a semiconductor layer (309) on the surface of the facets (307), which layer (309) has a band gap greater than that of the active layer (304); and cleaving the wafer along the striped groove (320) to obtain a semiconductor laser device. |
| 公开日期 | 1992-02-05 |
| 申请日期 | 1991-08-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64420]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | MATSUMOTO, MITSUHIRO,SASAKI, KAZUAKI,KONDO, MASAKI. A method for the production of a semiconductor laser device. EP0469900A2. 1992-02-05. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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