Manufacture of quantum fine line laser diode of current-injection type having buried structure
文献类型：专利
| 作者 | OMORI YUTAKA; TATE AKIYUKI; KOBAYASHI MORIO |
| 发表日期 | 1989-01-25 |
| 专利号 | JP1989021986A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of quantum fine line laser diode of current-injection type having buried structure |
| 英文摘要 | PURPOSE:To obtain a current-injection semiconductor laser having a reduced spectral width, by depositing a lower clad layer on III-V compound semiconductor crystals, forming linear ridges thereon and further depositing, on the ridges, a lower graded layer, a quantum well layer, a barrier layer, an upper graded layer, an upper clad layer and a contact layer. CONSTITUTION:A lower clad layer 6 is epitaxially grown on the surface having crystallographic plane orientation (100) or equivalent thereto, of substrate crystals 1A of a III-V compound semiconductor. On this lower clad layer 6, there are formed linear ridges having side walls whose planes are of crystallographic plane orientation (01-1) and (0-11) or equivalent thereto. Then, there are deposited a lower graded layer 7, at least one quantum well layer 8, at least one barrier layer 9, an upper graded layer 10, an upper clad layer 12 and a contact layer 13 by crystal growth subsequently in that order. The quantum well layer 8 on the linear ridges for example is used as an active layer for a laser diode. |
| 公开日期 | 1989-01-25 |
| 申请日期 | 1987-07-17 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64434]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | OMORI YUTAKA,TATE AKIYUKI,KOBAYASHI MORIO. Manufacture of quantum fine line laser diode of current-injection type having buried structure. JP1989021986A. 1989-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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