Intersubband mid-infrared electroluminescent semiconductor devices
文献类型：专利
| 作者 | BOTEZ, DAN; MIRABEDINI, ALI R.; XU, DAPENG P.; MAWST, LUKE |
| 发表日期 | 2005-07-21 |
| 专利号 | WO2005065304A2 |
| 著作权人 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 国家 | 世界知识产权组织 |
| 文献子类 | 发明申请 |
| 其他题名 | Intersubband mid-infrared electroluminescent semiconductor devices |
| 英文摘要 | A semiconductor laser and light-emitting device is defined. The device comprises an electron injector (see Fig. 2, Character 12) and an active region (see Fig. 2, Character 14) adjacent to the electron injector. The active region (see Fig. 2, Character 14) includes at least one deep quantum well with barrier layers adjacent to either side of the quantum well or wells such that electrons injected from the electron injector into a high energy level of the quantum well relax to a lower energy level with the emission of a photon and are transmitted out to a region beyond the last barrier layer of the active region. The electron injector includes quantum well layers. The bottom of each deep quantum well or wells in the active region is lower in energy than the bottoms of the quantum well layers in the electron injector. The device may further comprise at least two stages wherein each stage contains an electron injector and an active region. The stages are separated by semiconductor layers that allow the transfer of electrons from the active region of one stage to the electron injector of the next stage. |
| 公开日期 | 2005-07-21 |
| 申请日期 | 2004-12-29 |
| 状态 | 未确认 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64435]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | WISCONSIN ALUMNI RESEARCH FOUNDATION |
| 推荐引用方式 GB/T 7714 | BOTEZ, DAN,MIRABEDINI, ALI R.,XU, DAPENG P.,et al. Intersubband mid-infrared electroluminescent semiconductor devices. WO2005065304A2. 2005-07-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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