Double hetero-junction semiconductor laser
文献类型：专利
| 作者 | KAMATA MIKIO; ISHIKAWA HIDETO; HONDA KAZUO |
| 发表日期 | 1988-01-30 |
| 专利号 | JP1988023384A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Double hetero-junction semiconductor laser |
| 英文摘要 | PURPOSE:To permit a sufficient confinement of light by a method wherein the energy band gap between an active layer on one side on a conduction band side or a valence band side and a first clad layer is made larger than that between the active layer and a second clad layer. CONSTITUTION:An active layer 9 is a Ga0.47In0.53As layer having an energy gap of 0.75 eV, a P-type clad layer 4 is an Al0.48In0.52As layer having an energy gap of 45 eV and an n-type clad layer 3 is an InP layer having an energy gap 35 eV. AP GaInAsP layer 5 is a region for making a contact and connected to ohmic electrodes 7 through a striped window in an insulating layer 6 provided thereon. By forming the ohmic electrodes into a striped form, the region where current flows is made narrower and the threshold current can be made lower. An ohmic electrode 1 on the other side is formed on an n-type InP substrate 2. When current is caused to flow in the forward direction, minority carriers are injected from the clad layers and confined in the active layer and a recombination of electrons and holes is generated therein and light is emitted in the direction shown by an arrow. |
| 公开日期 | 1988-01-30 |
| 申请日期 | 1986-07-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64440]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | KAMATA MIKIO,ISHIKAWA HIDETO,HONDA KAZUO. Double hetero-junction semiconductor laser. JP1988023384A. 1988-01-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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