Growing method for semiconductor crystal
文献类型：专利
| 作者 | OOTA KAZUNARI; KAZUMURA MASARU; YAMANAKA HARUYOSHI |
| 发表日期 | 1982-05-01 |
| 专利号 | JP1982071130A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Growing method for semiconductor crystal |
| 英文摘要 | PURPOSE:To produce a III-V family compound made semiconductor by a method wherein its first layer is grown out of fused substance composed chiefly of Ga and then a second layer is grown out of fused substance composed chiefly on In and the second layer growth is achieved at a temperature lower by 5-20 deg.C than the temperature under which the liquefied In can stay saturated with V family elements. CONSTITUTION:Some Al, polycrystalline GaAs, and Te is added to liquefied Ga and an N type Ga0.3Al0.7As 16 film is formed on a n-GaAs substrate 15. The growing temperature is set at 800 deg.C and the quantity to be reduced at 5-20 deg.C. Next, an In1-xGaxP layer 17 is formed out of liquefied In, when a lattice alignment is accomplished with GaAs by controlling GaP and InP quantities to be added so that the composition may satisfy x=0.5 Liquefied In at the maximum temperature with Ga and P becomes oversaturated when the temperature descends by 5- 20 deg.C. contact with the substrate of the liquefied In oversaturated with Ga ensures a uniform crystal mixture of 0.51 free of Ga structural deviation even if some liquefied In used in the formation of the first layer remains. Further, coating of P type Ga0.3 Al0.7As 18 and pi type GaAs 19 are piled one upon another using the liquefied Ga, completing the process. |
| 公开日期 | 1982-05-01 |
| 申请日期 | 1980-10-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64447]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | OOTA KAZUNARI,KAZUMURA MASARU,YAMANAKA HARUYOSHI. Growing method for semiconductor crystal. JP1982071130A. 1982-05-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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