Multi-beam semiconductor laser device
文献类型：专利
| 作者 | TAKIGAWA SHINICHI; HAMADA TAKESHI |
| 发表日期 | 1991-01-17 |
| 专利号 | JP1991009589A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Multi-beam semiconductor laser device |
| 英文摘要 | PURPOSE:To enable easy attainment of a multi-beam semiconductor laser device having parallel optical axes by a method wherein semiconductor laser chips being adjacent to each other in the same wafer are made to oscillate at different wavelengths by changing the film thickness of the respective edge coat films thereof. CONSTITUTION:A one-layer or multiple-layer edge coat film 20, 21 is formed at least on one of a plurality of semiconductor laser chips 12, 13 cut out of the same wafer and separated by a dividing groove 19, and at least one layer of each edge coat film 20, 21 is made thicker than an inside-layer wavelength thereof. Accordingly, a plurality of semiconductor laser chips 12, 13 being different in an oscillation wavelength and having parallel optical axes can be formed on the semiconductor laser chips 20, 21 of the same construction. In this way, a multi-beam semiconductor laser device easy to fabricate can be obtained. |
| 公开日期 | 1991-01-17 |
| 申请日期 | 1989-06-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64451]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKIGAWA SHINICHI,HAMADA TAKESHI. Multi-beam semiconductor laser device. JP1991009589A. 1991-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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