Integrated laser diode
文献类型：专利
| 作者 | IKUWA YOSHITO; AOYANAGI TOSHITAKA; HIUGA SUSUMU |
| 发表日期 | 1989-04-26 |
| 专利号 | JP1989109788A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Integrated laser diode |
| 英文摘要 | PURPOSE:To allow a laser to oscillate with a basic mode to a high optical output by forming a buried layer having first and second conduction type regions, a first conductivity type clad layer, an activated layer, a second conductivity type clad layer, and a second conductivity type contact layer sequentially on a projected region between recessed regions formed on a substrate. CONSTITUTION:On a projected region 24 between recessed regions on a substrate 21 of a first conductivity type in which deeply recessed regions 22 are formed on both ends of the top and a shallowly recessed region 23 is formed at the center, a buried region having the first and second conductivity type regions 26, 27, a first conductivity type clad layer 28, an activated layer 29, a second conduction type clad layer 30, and a second conductivity type contact layer 31 are sequentially stacked. Accordingly, the second conductivity type layer 27 within the buried layer 25 functions as a current constricting layer, as a result a laser starts to oscillate on the recessed regions 22, 23, its equivalent refractive index being maximum on the recessed regions 22, 23, whereby the laser can oscillate with its basic mode up to a high optical output. |
| 公开日期 | 1989-04-26 |
| 申请日期 | 1987-10-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64454]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | IKUWA YOSHITO,AOYANAGI TOSHITAKA,HIUGA SUSUMU. Integrated laser diode. JP1989109788A. 1989-04-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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