Visible light emitting element
文献类型：专利
| 作者 | NOZAKI CHIHARU; YASUAMI SHIGERU |
| 发表日期 | 1989-11-17 |
| 专利号 | JP1989286481A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Visible light emitting element |
| 英文摘要 | PURPOSE:To facilitate control of oscillation wavelength by using, as an N-type InGaP active layer, a layer having an ordered structure capable of varying its band gap. CONSTITUTION:On an N-type GaAs substrate 32, there is provided a double- hetero junction consisting of an N-type InGaAlP clad layer 33, an InGaP active layer 44 and a P-type InGaAlP clad layer 35. When the active layer is formed under the conditions that a ratio of V-III is 100-200 and an amount of dopant represented by carrier concentration is 1X10cm or less, a film having ordered structure can be obtained if a growing temperature is 800 deg.C or less. Value of band gap energy of such film is variable. Accordingly, an N-type film whose band gap is variable in a range from 90eV to 85eV can be used as the InGaP active layer. Therefore, wavelength of oscillation can be controlled without deteriorating crystallinity. |
| 公开日期 | 1989-11-17 |
| 申请日期 | 1988-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64459]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | NOZAKI CHIHARU,YASUAMI SHIGERU. Visible light emitting element. JP1989286481A. 1989-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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