Manufacture of semiconductor optical device
文献类型：专利
| 作者 | NAKANO JUNICHI; UEKI MINEO; TSUZUKI NOBUYORI; NOGUCHI ETSUO; NAKANO YOSHINORI |
| 发表日期 | 1988-04-22 |
| 专利号 | JP1988092075A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor optical device |
| 英文摘要 | PURPOSE:To form, with excellent reproducibility, a semiconductor laser having an active layer of uniform width, by forming a mesa structure applying dry etching. CONSTITUTION:On an N-type InP substrate 31, a non-doped InGaAsP quadrimixed crystal active layer 32, a P-type InP clad layer 33 and a P-type lnGaAsP cap layer 34 are grown by epitaxy to constitute a double hetero wafer, in which a stripe is subjected to mesa etching by a reactive ion etching method in which SiO2 35 is applied to a mask and BBr gas is used as reaction gas. After that, the burying growth composed of P-type InGaAsP 36 and N-type InGaAsP 37 and the forming of a flattened layer of lnGaAsP quadrimixed crystal are performed. Then the side surface of a vertically dry-etched stripe is filled up to the same degree as in the case of mesa etching in which a conventional chemical etching of quadrimixed crystal is applied. Thereby the active layer width deviation is in the range of 5+ or -0.1mum, the irregularity of width is remarkably improved. |
| 公开日期 | 1988-04-22 |
| 申请日期 | 1986-10-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64466]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | NAKANO JUNICHI,UEKI MINEO,TSUZUKI NOBUYORI,et al. Manufacture of semiconductor optical device. JP1988092075A. 1988-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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