Semiconductor laser and method of production thereof
文献类型：专利
| 作者 | MITOMO, JUGO; NARUI, HIRONOBU |
| 发表日期 | 2002-06-27 |
| 专利号 | US20020080835A1 |
| 著作权人 | SONY CORPORATION |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and method of production thereof |
| 英文摘要 | A window structure type AlGaInP semiconductor laser able to suppress abnormal growth in the vicinity of a ridge and having good surface morphology, wherein a least one step-like structure is provided on a substrate having a surface tilted to a [0-1-1] direction from a (100) plane, a semiconductor stack is formed on the substrate and comprises an active layer including two types of Group III elements including at least indium (In) and Group V elements including phosphorus (P), a cladding layer of a first conductivity, a cladding layer of a second conductivity, end surfaces of an active layer serve as end surfaces of a resonator, a light guide is formed between and the end surfaces of the resonator, and the light guide is arranged at an upper step side of the step-like structure so that a portion of the light guide not including resonator end surfaces is positioned in the vicinity of the step-like structure and so that the resonator end surface portions of the light guide are farther from the step-like structure, and a method of production thereof. |
| 公开日期 | 2002-06-27 |
| 申请日期 | 2001-08-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64467]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | MITOMO, JUGO,NARUI, HIRONOBU. Semiconductor laser and method of production thereof. US20020080835A1. 2002-06-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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