Compound semiconductor element
文献类型：专利
| 作者 | EBE KOJI; NISHIJIMA YOSHITO; SHINOHARA KOJI |
| 发表日期 | 1987-12-17 |
| 专利号 | JP1987291193A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Compound semiconductor element |
| 英文摘要 | PURPOSE:To enable the easy attainment of a hetero junction of pb1-xSnxTe compound semiconductor crystals having a boundary conspicuous in a crystal composition difference, by interposing a rare-earth chalcogenide layer between hetero junction portions. CONSTITUTION:A first Pb1-xSnxTe crystal layer 12 is formed on a PbTe substrate crystal 11 by a molecular-beam epitaxial crystal growth method or the like. A second Pb1-xSnxTe crystal layer 14 of the same quality as the first crystal layer 12 can be formed on an interposed rare-earth chalcogenide layer 13 by an epitaxial growth method. In a hetero junction substance of two kinds of Pb1-xSnxTe compound semiconductor crystals different in composition, of a compound semiconductor element having such a construction as the above, the mutual diffusion of Sn on the boundary of the hetero junction thereof is checked easily by the interposition of the rare-earth chalcogenide layer 13 comprising EuTe and others. Since the thickness of the interposed rare-earth chalcogenide layer 13 is so small as that of one-atom layer, in addition, no change in a band gap is brought about, and thus the hetero junction substance of the Pb1-xSnxTe compound semiconductor crystals having a hetero interface conspicuous in a crystal composition difference can be obtained easily. |
| 公开日期 | 1987-12-17 |
| 申请日期 | 1986-06-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64477]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | EBE KOJI,NISHIJIMA YOSHITO,SHINOHARA KOJI. Compound semiconductor element. JP1987291193A. 1987-12-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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