Distributed reflector type semiconductor laser
文献类型：专利
| 作者 | WADA HIROSHI; HORIKAWA HIDEAKI; OGAWA HIROSHI |
| 发表日期 | 1990-04-18 |
| 专利号 | JP1990106084A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed reflector type semiconductor laser |
| 英文摘要 | PURPOSE:To enable the title laser to be stably oscillated in single vertical mode thereby facilitating the automatic output control by a method wherein a distributed reflector is provided with a quadratic or higher degree diffracting lattice as well as a photodetector detecting any diffracted beams from the distributed reflector on the upper part thereof. CONSTITUTION:A distributed reflector 43 is composed of a quadratic diffracting lattice 43a and a photoconductive channel layer 45. When normal bias is given to an n type electrode 63 and a p type electrode 65 for a semiconductor laser, an active layer 53a is fed with current to cause luminescent recoupling. Then, the emitted beams are respectively reflected on the end 53b of an active region side formed by cleavage and the distributed reflector 43 to cause laser oscillation. At this time, the distributed reflector 43 increases the reflectance only on the beams in wave length of lambda so that the semiconductor laser may be single mode-operated stably in the wave length of lambda. Furthermore, photodetector 55 detects the linear diffracted beams from the distributed reflector 43 so that potential difference may be caused between a p type electrode 55d and an n type electrode 55c for the photodetector resultantly enabling the laser beams to be monitored. Through these procedures, the semiconductor laser can be oscillated in vertical mode stably thereby facilitating the automatic output control. |
| 公开日期 | 1990-04-18 |
| 申请日期 | 1988-10-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64485]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | WADA HIROSHI,HORIKAWA HIDEAKI,OGAWA HIROSHI. Distributed reflector type semiconductor laser. JP1990106084A. 1990-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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