Semiconductor laser and light amplifier
文献类型：专利
| 作者 | OKAI MAKOTO; TSUJI SHINJI; NAKAMURA HITOSHI; OISHI AKIO; HATTORI SHINICHI; HIRAO MOTONAO; MATSUMURA HIROYOSHI |
| 发表日期 | 1987-11-11 |
| 专利号 | JP1987259489A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and light amplifier |
| 英文摘要 | PURPOSE:To give single directivity to a light source for optical communication by providing a stepped part to the substrate or epitaxial growth layer. CONSTITUTION:For example, in case a pattern of PSG (Phosphorus Silicate Glass)/SiO2 is transferred to the surface of p type InGaAsP buffer layer 4 using etchant, depth of groove, namely stepped part is set to the value 0.02-0.25 mum. By providing the stepped part to the interlayer interface in the axial direction of resonator, a coupling constant to the period structure provided to the substrate or epitaxial growth surface is different in the right side and left side. When a coupling coefficient in the right side of stepped part is KR, optical output from the right end surface is IR and these of the left side are KL, IL, respectively, there is a relation of IL/IR=KR/KL. Thereby, difference is generated in the coupling coefficients in the right and left sides of stepped part and single directivity can be given to the optical output. |
| 公开日期 | 1987-11-11 |
| 申请日期 | 1986-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64490]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OKAI MAKOTO,TSUJI SHINJI,NAKAMURA HITOSHI,et al. Semiconductor laser and light amplifier. JP1987259489A. 1987-11-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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