Short-wave semiconductor laser
文献类型：专利
| 作者 | SATO MAKOTO; UCHIDA KENJI; KONDO MASAHIKO; MINAGAWA SHIGEKAZU |
| 发表日期 | 1989-06-07 |
| 专利号 | JP1989145882A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Short-wave semiconductor laser |
| 英文摘要 | PURPOSE:To form an AlGaInPP type clad with a high carrier concentration without crystrallinity deteriorated, by disposing a Zn containing p-type GaAs layer with a concentration not less than a specific value of a carrier concentration adjacent to a p-type clad layer. CONSTITUTION:An Se doped GaAs layer 12, an Se doped (Al0.7Ga0.3)0.5In0.5P clad layer 13, a Ga0.5In0.5P active layer 14, a Zn doped (Al0.7Ga0.3)0.5In0.5P clad layer 15, a Zn doped GaAs 16, and an Se doped GaAs 17 are made to grow to thickness of 0.1-1mum on an n-type GaAs substrate 11 by the use of an organic metal vapor growth method. The growth temperature is 600-700 deg.C. When the p-type GaAs layer 16 and the p-type clad layer 15 are epitaxial growth layers having carrier concentrations 5X10cm and 1X10cm respectively, a series resistance of the element is as small as 3-6OMEGA, spite of the existence of a high resistance layer (p-type clad layer/several OMEGAs) in so that every element obtained continuously oscillates at room temperatures and does not deteriorate. |
| 公开日期 | 1989-06-07 |
| 申请日期 | 1987-12-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64491]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SATO MAKOTO,UCHIDA KENJI,KONDO MASAHIKO,et al. Short-wave semiconductor laser. JP1989145882A. 1989-06-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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