Semiconductor laser comprising a plurality of optically active regions
文献类型：专利
| 作者 | MARSH, JOHN HAIG; KIM, SHIN-SUNG |
| 发表日期 | 2004-06-24 |
| 专利号 | US20040120377A1 |
| 著作权人 | MARSH JOHN HAIG |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser comprising a plurality of optically active regions |
| 英文摘要 | There is disclosed an improved semiconductor laser device (10), and particularly, a broad area semiconductor laser with a singe-lobed far field pattern. Known broad area lasers are used for high power applications, but suffer from a number of problems such as filamentation, instabilities in the transverse mode, and poor far-field characteristics. The present invention addresses such by providing a semiconductor laser device (10) comprising: a plurality of optically active regions (240); each optically active region (240) including a Quantum Well (QW) structure (77); adjacent optically active regions (24) being spaced by an optically passive region; the/each optically passive region (245) being Quantum Well Intermixed (QW). The spacing between adjacent optically active regions (240) may conveniently be termed "segmentation". |
| 公开日期 | 2004-06-24 |
| 申请日期 | 2002-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64498]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MARSH JOHN HAIG |
| 推荐引用方式 GB/T 7714 | MARSH, JOHN HAIG,KIM, SHIN-SUNG. Semiconductor laser comprising a plurality of optically active regions. US20040120377A1. 2004-06-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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