Semiconductor laser with low beam divergence
文献类型：专利
| 作者 | HOBSON, WILLIAM SCOTT; VAKHSHOORI, DARYOOSH |
| 发表日期 | 1997-08-20 |
| 专利号 | EP0790685A1 |
| 著作权人 | LUCENT TECHNOLOGIES INC. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with low beam divergence |
| 英文摘要 | The inventive III/V semiconductor lasers comprise mode-shaping layers (13, 17) disposed in the upper and lower cladding regions, respectively, and having larger refractive index than the adjoining cladding material. Incorporation of the mode-shaping layers can significantly spread the mode structure of the laser, with attendant reduction of beam spreading. Preferred embodiments are Al-free III/V semiconductor lasers. Especially preferred are such lasers that do not have quaternary III/V semiconductor material between active region and substrate, for improved heat removal. |
| 公开日期 | 1997-08-20 |
| 申请日期 | 1997-02-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64502]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUCENT TECHNOLOGIES INC. |
| 推荐引用方式 GB/T 7714 | HOBSON, WILLIAM SCOTT,VAKHSHOORI, DARYOOSH. Semiconductor laser with low beam divergence. EP0790685A1. 1997-08-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。