Photoelectronic integrated element and manufacture thereof
文献类型：专利
| 作者 | FURUYAMA HIDETO; SUZUKI NOBUO; HIRAYAMA YUZO; MORINAGA MOTOYASU |
| 发表日期 | 1989-02-22 |
| 专利号 | JP1989048483A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectronic integrated element and manufacture thereof |
| 英文摘要 | PURPOSE:To improve yield, reliability, and characteristics by making crystal layers to be common as much as possible and by forming fine patterns simultaneously. CONSTITUTION:A n-InP active layer 2, GaInAsP active layer 3, and p-InP clad layer 4 are allowed to grow on a SI-InP substrate 1 and the pattern is formed by a photoresist 5. This photoresist or pattern-transferred SiO2 allows pattern transfer to the active layer and a p-InP embedding layer 6 and p-GaInAsP cap layer 7 are allowed to grow on the entire surface after eliminating mask. Then, P electrodes 8a and 8b are allowed to grow and selective mesa etching is performed up to the active layer 3 and a source electrode 9a and drain electrode 9b are formed in self-aligned manner. In this manner, the process is made to be common and semiconductor crystal layer is made to be common to drastically improve reliability, yield, and characteristics of elements. |
| 公开日期 | 1989-02-22 |
| 申请日期 | 1987-08-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64505]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | FURUYAMA HIDETO,SUZUKI NOBUO,HIRAYAMA YUZO,et al. Photoelectronic integrated element and manufacture thereof. JP1989048483A. 1989-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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