Light emitting device of semiconductor and manufacture thereof
文献类型：专利
| 作者 | YAMAGOSHI SHIGENOBU |
| 发表日期 | 1989-03-01 |
| 专利号 | JP1989053491A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Light emitting device of semiconductor and manufacture thereof |
| 英文摘要 | PURPOSE:To improve transverse optical confinement effect by forming both sides of luminous stripe in an active region of hetero junction. CONSTITUTION:An n-type AlGa1-XAs layer 2 which becomes a first clad layer and a quantum well construction 3 which becomes an active layer is formed on a GaAs substrate Then, an n-type Al2Ga1-ZAs layer 4 which becomes a second clad layer and an n-type GaAs layer 5 which becomes a cap layer are formed. And then, a silicon nitride film 20 is formed only on an area which becomes a luminous stripe, zinc is dissipated at approximately 600 to 900 degrees by the closed pipe method, and a p-type region 16 is formed on both sides of a region which becomes the luminous stripe. Then, the junction between the GaAs layer and the p-type region 16 constituting the quantum well structure 3 is in pn junction and constitutes a hetero-junction. The p-type AlGaAs region 16 has a smaller reflection index than the GaAs layer of quantum well layer so that optical confinement is effectively performed in the quantum well construction 3. |
| 公开日期 | 1989-03-01 |
| 申请日期 | 1988-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64508]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | YAMAGOSHI SHIGENOBU. Light emitting device of semiconductor and manufacture thereof. JP1989053491A. 1989-03-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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