Photoelectron integrated circuit
文献类型：专利
| 作者 | ONAKA SEIJI; TSUJII HIRAAKI; SASAI YOICHI; SHIBATA ATSUSHI |
| 发表日期 | 1988-05-24 |
| 专利号 | JP1988120487A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Photoelectron integrated circuit |
| 英文摘要 | PURPOSE:To make it possible to form the cathode electrode of a laser on the surface of an element, and make high-speed operation of the element possible, by forming a first clad layer and an active layer on a semi-insulating substrate, forming a second clad layer and a collector layer on the active layer, and burying insulator between the second clad layer and the collector layer. CONSTITUTION:On a semi-insulating substrate 1, a first clad layer 2 of one conductivity type and an active layer 3 are formed, and on the active layer 3, a second clad layer 4 of inverse conductivity type and a collector layer 7 of one conductivity type are formed. The second clad layer 4 is in the form of a stripe and injects a current into the active layer 3. Insulator 15 is buried between the second clad layer 4 and the collector layer 7. For example, on a semi-insulating InP substrate 1, the following are formed: an N-type InP first clad layer 2, an InGaAsP active layer 3, a P-type InP second clad layer 4, and a P-type InGaAsP cap layer 5. After selective etching, the following are formed: an N-type collector layer 7, a P-type InGaAsP base layer 8, an N-type InP emitter layer 9, and an N-type InGaAsP emitter contact layer 10. Then, polyimide buried regions 13 and 15 are formed. |
| 公开日期 | 1988-05-24 |
| 申请日期 | 1986-11-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64509]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | ONAKA SEIJI,TSUJII HIRAAKI,SASAI YOICHI,et al. Photoelectron integrated circuit. JP1988120487A. 1988-05-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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