Manufacture of light emitting element of semiconductor
文献类型：专利
| 作者 | TANAKA TOSHIAKI; YAMASHITA SHIGEO; KAJIMURA TAKASHI |
| 发表日期 | 1989-09-18 |
| 专利号 | JP1989232784A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of light emitting element of semiconductor |
| 英文摘要 | PURPOSE:To make a step buried to be flat so as to obtain a planar laser element which is small in an inner resistance and almost free from a crystalline defect by a method wherein a ridge step is formed using an insulating film mask whose width is larger than that of the ridge. CONSTITUTION:An insulating film 12 is formed above a clad layer 5 and a p-type GaAs layer 6. Moreover, the insulating film 12 is etched through a stripe resist pattern 13, whose width is larger than that of a ridge shape which is formed by applying photoresist, as a mask for the formation of a stripe mask 2a. The layers 5 and 6 are subjected to an etching taking advantage of the mask 12a to form a ridge-type stripe structure where the length W1 of the protruding part of the mask 12a is equal to or larger than the width W2 of a crystal grown on the slope of the ridge structure formed through an etching. Then, a current constriction layer 7 is grown in crystal nearly as thick as the step of the ridge-type structure as the mask 12a is kept unremoved to make the step buried to be flat. Next, after the mask 12a is removed, a buried layer 8 and a cap layer 9 are grown in crystal to be flat. |
| 公开日期 | 1989-09-18 |
| 申请日期 | 1988-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64513]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIAKI,YAMASHITA SHIGEO,KAJIMURA TAKASHI. Manufacture of light emitting element of semiconductor. JP1989232784A. 1989-09-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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