Manufacturing process for photosemiconductor device
文献类型：专利
| 作者 | OKAZAKI JIRO |
| 发表日期 | 1991-03-04 |
| 专利号 | JP1991049288A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacturing process for photosemiconductor device |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device which forms a buried layer without leak bus and provides excellent response characteristic and luminous efficiency by introducing gases which include dopant required to increase the resistibility of a buried layer at a specified time in a process to increase the temperature of a substrate. CONSTITUTION:When forming a first cladding layer laminated consecutively and etched in mesa shape on a substrate 1, an active layer 3, and a buried layer 6 which buries the side of a second cladding layer 4 based on gas phase growth, this manufacturing process is designed to introduce gases which include dopant required to increase the resistibility of this buried layer 6. Under this manufacturing process, doping is carried out to increase the resistibility of the buried layer 6 on a recessed part 61 to be buried by mass transfer. This construction makes it possible to eliminate leak on both sides of the active layer 3 and hence provide a semiconductor device capable of carrying out a high output performance at low threshold current. |
| 公开日期 | 1991-03-04 |
| 申请日期 | 1989-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64514]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | OKAZAKI JIRO. Manufacturing process for photosemiconductor device. JP1991049288A. 1991-03-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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