Manufacture of buried method type semiconductor laser element
文献类型：专利
| 作者 | SHIGE NORIYUKI |
| 发表日期 | 1984-11-27 |
| 专利号 | JP1984208884A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of buried method type semiconductor laser element |
| 英文摘要 | PURPOSE:To improve the wetting property of solder at the time of mounting the titled element by flatterning the surface on the side of a multilayer structure by a method wherein a growth promoting layer wherein a GaAs layer grows also at the stripe part is previously provided on a P type clad layer, when the GaAs layer is grown by lamination on a buried layer. CONSTITUTION:An N type GaAlAs clad layer 5, a GaAs active layer 6, a P type Ga1-xAlxAs clad layer 7, and the Ga1-yAly As growth promoting layer 15 are laminated on a GaAs substrate 2. Many mesa etching grooves 16 are provided in parallel in the fixed direction, the P type GaAlAs buried layers 4 are grown, and a GaAs or Ga1-zAlzAs flattened layer 17 is grown. At this time, setting the mixed crystal ratio (y) of the Al of the growth promoting layer 15 at zero causes the buried layer 4 to grow on said layer 15, increasing the ratio (y) does not cause the flattened layer 17 on said layer 15, keeping the ratio (y) at approx. 0.01-0.2 causes said layer 17 also on said layer 15. |
| 公开日期 | 1984-11-27 |
| 申请日期 | 1983-05-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64520]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI. Manufacture of buried method type semiconductor laser element. JP1984208884A. 1984-11-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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