Manufacture of ppibh-ld
文献类型：专利
| 作者 | FUJIWARA MASATOSHI |
| 发表日期 | 1992-07-28 |
| 专利号 | JP1992206792A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of ppibh-ld |
| 英文摘要 | PURPOSE:To make a distance between an n-clad layer and an n-block layer controllable so as to prevent fluctuation of characteristics by implanting impurities from outside before growing an n-clad layer in order to cut the n-clad layer and the n-block layer. CONSTITUTION:After growing an active layer 1 and an n-InP clad layer 5a on a p-InP substrate, mesa etching is performed in order to grow a p-InP buried layer 2, an n-InP block layer 3 and a p-InP block layer 4. Next, impurities, for instance, such as Zn to form a p-region are implanted or diffused in a tilting part. Next, the n-InP clad layer 5 and an n-InGaAs contact layer 6 are made to grow. |
| 公开日期 | 1992-07-28 |
| 申请日期 | 1990-11-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64530]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | FUJIWARA MASATOSHI. Manufacture of ppibh-ld. JP1992206792A. 1992-07-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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