Ion implanted grating
文献类型：专利
| 作者 | BULLINGTON, JEFF A. |
| 发表日期 | 2002-10-08 |
| 专利号 | AU2002306838A1 |
| 著作权人 | INFINITE PHOTONICS, INC. |
| 国家 | 澳大利亚 |
| 文献子类 | 发明申请 |
| 其他题名 | Ion implanted grating |
| 英文摘要 | Our wafer scale processing techniques produce chip-laser-diodes (20) with a diffraction grating (30) that redirects output light out the top and/or bottom surfaces. Noise reflections are carefully controlled, allowing significant reduction of the signal fed to the active region. This improvement uses ion-implanting of the grating fingers extending down into the top cladding layer (28) over the waveguide region. Preferably, photoresist has been deposited prior to the ion implantation and the pattern for the grating fingers is opened in said photoresist, and then ions are implanted and then the photoresist is removed, and the preferably the ion implantation is done with helium or argon ions. |
| 公开日期 | 2002-10-08 |
| 申请日期 | 2002-03-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64532]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INFINITE PHOTONICS, INC. |
| 推荐引用方式 GB/T 7714 | BULLINGTON, JEFF A.. Ion implanted grating. AU2002306838A1. 2002-10-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。