Vertical cavity laser diode
文献类型：专利
| 作者 | OTSUBO, KOJI, C/O FUJITSU LIMITED; SHOJI, HAJIME, C/O FUJITSU LIMITED |
| 发表日期 | 1994-11-02 |
| 专利号 | EP0622876A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Vertical cavity laser diode |
| 英文摘要 | A planar vertical cavity laser diode includes a substrate (1), a first multilayer structure (2) (first distributed Biagg reflector) on the substrate and formed of an alternate stacking of a first epitaxial layer and a second epitaxial layer of doped semiconductor materials, a cavity structure (3) provided on the first multilayer structure and including an undoped active layer for producing optical radiation as a result of stimulated emission, a second multilayer structure (5) (second DBR) provided on the cavity structure and formed of an alternate stacking of a third epitaxial layer and a fourth epitaxial layer of undoped semicondotor materials, a first electrode structure (19₁,10₂) on a bottom surface of the substrate, a second electrode structure (8₁,8₂) for injecting carriers to said active layer via said cavity structure, an optical passage (anti-reflection coating, 9) provided in one of the first and second electrode structures for allowing an optical beam to pass therethrough; a a current path structure (3₇) provided between the second electrode structure and the active layer for providing a passage of the carriers, a current confinement structure (4) for confining the passage of the carriers such that said carriers flow along a path generally coincident to an optical path of the optical beam, and a conductive region (7,11) provided in contact with said the electrode structure for causing the carriers to flow therethrough, wherein the conductive region is provided so as to avoid the optical path. |
| 公开日期 | 1994-11-02 |
| 申请日期 | 1994-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64536]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | OTSUBO, KOJI, C/O FUJITSU LIMITED,SHOJI, HAJIME, C/O FUJITSU LIMITED. Vertical cavity laser diode. EP0622876A1. 1994-11-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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