Variable-wavelength semiconductor laser
文献类型：专利
| 作者 | SEKIGUCHI YOSHINOBU |
| 发表日期 | 1992-03-23 |
| 专利号 | JP1992088687A |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Variable-wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To enable an optical semiconductor waveguide to change in refractive index without increasing it in absorption loss and to enable a semiconductor laser to oscillate laser rays variable in wavelength by a method wherein a semiconductor optical waveguide which contains a specific quantum well of two or more layers and a barrier layer prescribed in thickness is provided, and an impressed voltage is controlled. CONSTITUTION:An N-AlGaAs clad layer 2, a supper lattice waveguide layer 3 composed of alternately laminated N-GaAs well layers 31 and high resistive AlGaAs layers 32, and a GaAs active layer 4 are made to grow on an N-GaAs substrate 1 through an adequate method, and a secondary diffraction grating 5 is provided on the surface of the outer waveguide layer. At this point, when a negative bias is applied to an electrode 11, the waveguide layer 3 decreases in refractive index. Therefore, the diffraction grating 5 is lessened in Bragg wavelength, and oscillation wavelength becomes shorter. At this point, a voltage applied to a phase control region 21 and a DRB region 22 is controlled to quasi- continuously change oscillation laser rays in wavelength. |
| 公开日期 | 1992-03-23 |
| 申请日期 | 1990-08-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/64541]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | SEKIGUCHI YOSHINOBU. Variable-wavelength semiconductor laser. JP1992088687A. 1992-03-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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